| PART |
Description |
Maker |
| ESSDC512 ESSDC64 ESSDC128 ESSDC256 |
64MB/128MB/256MB/512MB Secure Digital Card
|
Eorex Corporation
|
| PC28F256G18AF PC28F256G18AE PC28F128G18FF PC28F00A |
128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
|
Micron Technology
|
| M464S1724ETSNBSP M464S0924E M464S0924ETS M464S0924 |
64MB / 128MB Unbuffered SODIMM
64MB 128MB Unbuffered SODIMM
64MB, 128MB Unbuffered SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K9S1208V0 K9S1208V0M_A-SSB0 |
64MB & 128MB SmartMediaTM Card
|
SAMSUNG[Samsung semiconductor]
|
| HYS72V32220GU-8-C2 HYS64V16300GU HYS64V16300GU-7.5 |
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank (ECC) End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank End-of-Life
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
|
| KBE00F005A-D411 |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
Samsung Electronic
|
| KBE00F005A-D411 KBE00F005A |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG[Samsung semiconductor]
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EM484M1644VTA-7F EM484M1644VTA-7FE EM484M1644VTA-6 |
64Mb (1M隆驴4Bank隆驴16) Synchronous DRAM
64Mb (1M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| GMM77332280CNTG GMM77316280CTG |
32Mx72|3.3V|5/6|x36|FP/EDO DRAM - 256MB Buffered DIMM 32Mx72 | 3.3 | 5 / 6 | x36 |计划生育/ EDO公司的DRAM - 256MB的缓冲DIMM
16Mx72|3.3V|5/6|x 18|FP/EDO DRAM - 128MB Buffered DIMM
|
Linear Technology, Corp.
|
